All TEA172x products are housed in a small SO7 package. This package has the same footprint as the well-known standard SO8 package but one pin is removed between the source and the drain of the MOSFET. This is needed to create a sufficient spacer distance between the HV and LV components. The TEA172x contains two separate dice, a low voltage controller die and a high voltage die for the power MOSFET. Both dice are developed in NXP’s Silicon On Insulator processes. These processes don’t have bulk substrate like conventional processes, resulting in extremely low leakage currents, even at high temperatures. This enables the use of very low operating current levels in the IC, allowing high efficiency and very low standby power figures. Other advantages of the Silicon On Insulator processes are high-speed protection circuits, latch-up insensitivity and low signal interferences.