SCT2080KEC Rohm Semiconductor | Discrete Semiconductor Products

SCT2080KEC
cms-digikey-product-number	SCT2080KEC-ND
cms-manufacturer	Rohm Semiconductor
cms-manufacturer-product-number	SCT2080KEC
cms-description	SICFET N-CH 1200V 40A TO247
cms-customer-reference
cms-detailed-description	N-Channel 1200 V 40A (Tc) 262W (Tc) Through Hole TO-247
cms-datasheet	cms-datasheet
cms-eda-cad-models	SCT2080KEC Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id	4V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 18 V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	2080 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	262W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Base Product Number	SCT2080