SiCFET (Silicon Carbide) Single FETs, MOSFETs

Results: 906
Manufacturer
Alpha & Omega Semiconductor Inc.Analog Power Inc.ANBON SEMICONDUCTOR (INT'L) LIMITEDCoolCADDiodes IncorporatedDiotec SemiconductorfastSiCGeneSiC SemiconductorGoford SemiconductorInfineon TechnologiesInventchipIXYS
Series
-*C2M™C3M™CoolSiC™CoolSiC™ Gen 2CoolSIC™ M1EE SeriesE-SeriesEasyPACK™Falcon
Packaging
BoxBulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveLast Time BuyNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Drain to Source Voltage (Vdss)
400 V650 V700 V750 V900 V1000 V1200 V1.2 kV1700 V2000 V3300 V
Current - Continuous Drain (Id) @ 25°C
3A3A (Tc)3.7A (Tc)4A4A (Tc)4.2A (Tc)4.3A (Tc)4.5A (Tc)4.6A (Tc)4.7A (Tc)4.9A (Tc)5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 18V10V12V12V, 15V15V15V, 18V15V, 20V16V, 20V18V18V, 20V20V-
Rds On (Max) @ Id, Vgs
6.1mOhm @ 146.3A, 20V7.7mOhm @ 89.9A, 18V8.5mOhm @ 146.3A, 18V9.9mOhm @ 108A, 18V10.6mOhm @ 90.3A, 18V11.3mOhm @ 93A, 20V12.2mOhm @ 56.7A, 18V13mOhm @ 100A, 18V13.2mOhm @ 64.2A, 20V14.2mOhm @ 60A, 12V14.4mOhm @ 37.1A, 18V15mOhm @ 41.5A, 20A
Vgs(th) (Max) @ Id
1.5V @ 14mA1.5V @ 4mA1.5V @ 4mA (Typ)1.6V @ 4mA1.6V @ 4mA (Typ)2V @ 250µA2V @ 250µA (Min)2V @ 6mA2V @ 8mA2.2V @ 14mA2.2V @ 20mA (Typ)2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 12 V5.3 nC @ 18 V5.5 nC @ 12 V5.9 nC @ 18 V6 nC @ 18 V7.9 nC @ 18 V8 nC @ 12 V8.1 nC @ 12 V8.5 nC @ 18 V9.4 nC @ 18 V9.5 nC @ 15 V9.7 nC @ 18 V
Vgs (Max)
-10V, +20V-8V, +19V4.2V @ 1mA+15V, -4V+15V, -5V±15V15V15V, 12V+18V, -15V+18V, -3V+18V, -4V+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds
111 pF @ 1000 V124 pF @ 1000 V133 pF @ 1000 V139 pF @ 1000 V150 pF @ 600 V150 pF @ 1000 V170 pF @ 800 V182 pF @ 800 V184 pF @ 800 V184 pF @ 1000 V184 pF @ 1360 V191 pF @ 1000 V
FET Feature
-Current SensingDepletion Mode
Power Dissipation (Max)
313mW (Tj)3.7W (Ta), 468W (Tc)3.7W (Ta), 477W (Tc)3.8W (Ta), 150W (Tc)3.8W (Ta), 167W (Tc)3.8W (Ta), 214W (Tc)3.8W (Ta), 341W (Tc)3.8W (Ta), 429W (Tc)29W (Tc)35W (Tc)40.8W (Tc)41W (Tc)
Operating Temperature
-60°C ~ 175°C (TJ)-55°C ~ 135°C (TJ)-55°C ~ 150°C-55°C ~ 150°C (TJ)-55°C ~ 155°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)175°C175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
-Chassis MountSurface MountThrough Hole
Supplier Device Package
4-PDFN (8x8)4-TDFN (8x8)8-HPSOF8-PQFN (5x6), Power56-D2PAK (7-Lead)D2PAK-7D2PAK-7LD3D3PAKDieH2Pak-2
Package / Case
4-PowerTSFN8-PowerSFN8-PowerVDFN9-PowerTDFN22-PowerBSOP Module-D-3 ModuleDieModuleSOT-227-4, miniBLOCTO-220-2TO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TO263-7
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
Infineon Technologies
2,044
In Stock
1 : $7.56000
Cut Tape (CT)
1,000 : $2.87392
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.2A (Tc)
12V, 15V
1000mOhm @ 1A, 15V
5.7V @ 1.1mA
5 nC @ 12 V
+20V, -10V
275 pF @ 1000 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
6,673
In Stock
1 : $8.32000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO263-7
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
Infineon Technologies
1,844
In Stock
1 : $8.74000
Cut Tape (CT)
1,000 : $3.48399
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7.4A (Tc)
12V, 15V
650mOhm @ 1.5A, 15V
5.7V @ 1.7mA
8 nC @ 12 V
+20V, -10V
422 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
1,203
In Stock
1 : $8.75000
Cut Tape (CT)
1,000 : $3.35128
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
8.1A (Tc)
15V, 18V
233.9mOhm @ 3A, 18V
5.1V @ 900µA
7.9 nC @ 18 V
+20V, -7V
290 pF @ 800 V
-
80W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
Infineon Technologies
1,233
In Stock
1 : $9.39000
Cut Tape (CT)
1,000 : $3.68657
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
-
468mOhm @ 2A, 18V
5.7V @ 1mA
5.9 nC @ 18 V
+18V, -15V
196 pF @ 800 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
GeneSiC Semiconductor
3,055
In Stock
1 : $9.98000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
15V
192mOhm @ 10A, 15V
2.69V @ 5mA
28 nC @ 15 V
±15V
730 pF @ 800 V
-
123W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2,551
In Stock
1 : $11.03000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO263-7-12
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
977
In Stock
1 : $11.48000
Cut Tape (CT)
1,000 : $4.81721
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247N
SCT3120ALGC11
SICFET N-CH 650V 21A TO247N
Rohm Semiconductor
5,199
In Stock
1 : $12.19000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
18V
156mOhm @ 6.7A, 18V
5.6V @ 3.33mA
38 nC @ 18 V
+22V, -4V
460 pF @ 500 V
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-263-8
G3R450MT17J-TR
1700V 450M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
1,504
In Stock
1 : $12.30000
Cut Tape (CT)
800 : $9.30244
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
8A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
+15V, -5V
454 pF @ 1000 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT2xxxNYTB
SCT2750NYTB
SICFET N-CH 1700V 5.9A TO268
Rohm Semiconductor
1,186
In Stock
1 : $12.42000
Cut Tape (CT)
400 : $5.36058
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.9A (Tc)
18V
975mOhm @ 1.7A, 18V
4V @ 630µA
17 nC @ 18 V
+22V, -6V
275 pF @ 800 V
-
57W (Tc)
175°C (TJ)
-
-
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
1,565
In Stock
1 : $13.36000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.6A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
19 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0280090J-TR
C3M0280090J-TR
SICFET N-CH 900V 11A D2PAK-7
Wolfspeed, Inc.
7,077
In Stock
1 : $14.05000
Cut Tape (CT)
800 : $6.29213
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
900 V
11A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5 nC @ 15 V
+18V, -8V
150 pF @ 600 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPW65R099CFD7AXKSA1
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
Infineon Technologies
793
In Stock
1 : $15.74000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
2,695
In Stock
1 : $16.07000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-TO247-4-1
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
246
In Stock
1 : $16.08000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
TO-247-3
MSC035SMA070B
MOSFET N-CH 700V TO247
Microchip Technology
115
In Stock
1 : $16.13000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
700 V
77A (Tc)
20V
44mOhm @ 30A, 20V
2.7V @ 2mA
99 nC @ 20 V
+25V, -10V
2010 pF @ 700 V
-
283W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
794
In Stock
1 : $16.48000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
IPW65R099CFD7AXKSA1
IMW65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
560
In Stock
1 : $16.78000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3
NTHL040N120M3S
SIC MOS TO247-3L 40MOHM 1200V M3
onsemi
3,259
In Stock
1 : $16.85000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
54A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+22V, -10V
1700 pF @ 800 V
-
231W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-263-8
G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
5,473
In Stock
1 : $16.88000
Cut Tape (CT)
800 : $12.76023
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
38A (Tc)
15V, 18V
85mOhm @ 20A, 18V
2.7V @ 10mA
47 nC @ 15 V
+22V, -10V
1545 pF @ 800 V
-
196W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247N
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
2,150
In Stock
1 : $16.92000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
208mOhm @ 5A, 18V
5.6V @ 2.5mA
42 nC @ 18 V
+22V, -4V
398 pF @ 800 V
-
103W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
C3M0280090J-TR
C3M0120090J
SICFET N-CH 900V 22A D2PAK-7
Wolfspeed, Inc.
5,828
In Stock
1 : $17.69000
Tube
Tube
Last Time Buy
N-Channel
SiCFET (Silicon Carbide)
900 V
22A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
17.3 nC @ 15 V
+18V, -8V
350 pF @ 600 V
-
83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
NTHL060N090SC1
SICFET N-CH 900V 46A TO247-3
onsemi
413
In Stock
1 : $17.92000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
46A (Tc)
15V
84mOhm @ 20A, 15V
4.3V @ 5mA
87 nC @ 15 V
+19V, -10V
1770 pF @ 450 V
-
221W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
D2PAK-7
NVBG160N120SC1
SICFET N-CH 1200V 19.5A D2PAK
onsemi
2,730
In Stock
1 : $18.62000
Cut Tape (CT)
800 : $9.10083
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
19.5A (Tc)
20V
224mOhm @ 12A, 20V
4.3V @ 2.5mA
33.8 nC @ 20 V
+25V, -15V
678 pF @ 800 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 906

SiCFET (Silicon Carbide) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.