N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
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IMZA65R027M1HXKSA1

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448-IMZA65R027M1HXKSA1-ND
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IMZA65R027M1HXKSA1
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MOSFET 650V NCH SIC TRENCH
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N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
Datasheet
 Datasheet
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IMZA65R027M1HXKSA1 Models
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Mfr
Series
Packaging
Tube
Part Status
Not For New Designs
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
34mOhm @ 38.3A, 18V
Vgs(th) (Max) @ Id
5.7V @ 11mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2131 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
189W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-3
Package / Case
Base Product Number
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In-Stock: 274
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Not recommended for new design, minimums may apply cms-view-ph0
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Tube
cms-quantityUnit Pricecms-ext-price
1$21.87000$21.87
30$13.30367$399.11
120$11.42725$1,371.27
510$10.38449$5,296.09
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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without GST:$21.87000
Unit Price with GST:$24.05700