TO-247-4 Single FETs, MOSFETs

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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-4
MSC750SMA170B4
TRANS SJT 1700V TO247-4
Microchip Technology
156
In Stock
1 : $8.81000
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-
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Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
940mOhm @ 2.5A, 20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
+23V, -10V
184 pF @ 1360 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R60MT07K
750V 60M TO-247-4 G3R SIC MOSFET
GeneSiC Semiconductor
1,052
In Stock
1 : $16.33000
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Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4
STW88N65M5-4
MOSFET N-CH 650V 84A TO247-4L
STMicroelectronics
594
In Stock
1 : $20.32000
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N-Channel
MOSFET (Metal Oxide)
650 V
84A (Tc)
10V
29mOhm @ 42A, 10V
5V @ 250µA
204 nC @ 10 V
±25V
8825 pF @ 100 V
-
450W (Tc)
150°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4L
UJ4C075060K4S
SICFET N-CH 750V 28A TO247-4
onsemi
501
In Stock
1 : $20.96000
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N-Channel
SiCFET (Cascode SiCJFET)
750 V
28A (Tc)
-
74mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1422 pF @ 100 V
-
155W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
C3M0065100K
C3M0075120K
SICFET N-CH 1200V 30A TO247-4L
Wolfspeed, Inc.
547
In Stock
1 : $21.67000
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N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4
NTH4L040N120M3S
SILICON CARBIDE (SIC) MOSFET ELI
onsemi
174
In Stock
185,400
Factory
1 : $23.76000
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SiCFET (Silicon Carbide)
1200 V
54A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+22V, -10V
1700 pF @ 800 V
-
231W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4L
UJ4C075033K4S
750V/33MOHM, SIC, CASCODE, G4, T
onsemi
2,996
In Stock
1 : $25.22000
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SiCFET (Cascode SiCJFET)
750 V
47A (Tc)
12V
41mOhm @ 30A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1400 pF @ 400 V
-
242W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
228
In Stock
1 : $26.12000
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SiCFET (Silicon Carbide)
650 V
103A (Tc)
15V, 20V
13.2mOhm @ 64.2A, 20V
5.6V @ 13mA
79 nC @ 18 V
+23V, -7V
2792 pF @ 400 V
-
341W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
AIMZA75R016M1HXKSA1
IPZ60R017C7XKSA1
MOSFET N-CH 600V 109A TO247-4
Infineon Technologies
238
In Stock
1 : $26.62000
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MOSFET (Metal Oxide)
600 V
109A (Tc)
10V
17mOhm @ 58.2A, 10V
4V @ 2.91mA
240 nC @ 10 V
±20V
9890 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4
TO-247-4
TO-247-4
NTH4L022N120M3S
SIC MOS TO247-4L 22MOHM 1200V
onsemi
587
In Stock
27,900
Factory
1 : $26.73000
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SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
151 nC @ 18 V
+22V, -10V
3175 pF @ 800 V
-
352W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4 Top
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
GeneSiC Semiconductor
1,487
In Stock
1 : $27.75000
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SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
200
In Stock
1 : $31.91000
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SiCFET (Silicon Carbide)
1200 V
98A (Tc)
15V, 18V
26.9mOhm @ 41A, 18V
5.2V @ 17.6mA
109 nC @ 18 V
+20V, -5V
3460 pF @ 800 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
C3M0065100K
C3M0025065K
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
896
In Stock
1 : $32.73000
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N-Channel
SiCFET (Silicon Carbide)
650 V
97A (Tc)
15V
34mOhm @ 33.5A, 15V
3.6V @ 9.22mA
112 nC @ 15 V
+19V, -8V
2980 pF @ 600 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
272
In Stock
1 : $33.42000
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SiCFET (Silicon Carbide)
650 V
144A (Tc)
15V, 20V
9.1mOhm @ 92.1A, 20V
5.6V @ 18.7mA
112 nC @ 18 V
+23V, -7V
4001 pF @ 400 V
-
440W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
240
In Stock
1 : $36.57000
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SiCFET (Silicon Carbide)
2000 V
48A (Tc)
15V, 18V
64mOhm @ 20A, 18V
5.5V @ 12.1mA
82 nC @ 18 V
+20V, -7V
-
-
348W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
IMZC120R022M2HXKSA1
IMZC120R012M2HXKSA1
SICFET N-CH 1200V 129A TO247
Infineon Technologies
943
In Stock
1 : $36.94000
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SiCFET (Silicon Carbide)
1200 V
129A (Tc)
15V, 18V
12mOhm @ 57A, 18V
5.1V @ 17.8mA
124 nC @ 18 V
+23V, -7V
4050 pF @ 800 V
-
480W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-17
TO-247-4
TO-247-4L
UJ4C075018K4S
SICFET N-CH 750V 81A TO247-4
onsemi
901
In Stock
1 : $37.34000
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SiCFET (Cascode SiCJFET)
750 V
81A (Tc)
-
23mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1422 pF @ 100 V
-
385W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4
FCH023N65S3L4
MOSFET N-CH 650V 75A TO247
onsemi
569
In Stock
69,750
Factory
1 : $37.89000
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MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
23mOhm @ 37.5A, 10V
4.5V @ 7.5mA
222 nC @ 10 V
±30V
7160 pF @ 400 V
-
595W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
2,655
In Stock
1 : $41.99000
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SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 25 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
TO-247-4L
UF3C120040K4S
SICFET N-CH 1200V 65A TO247-4
onsemi
567
In Stock
1 : $43.55000
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SiCFET (Cascode SiCJFET)
1200 V
65A (Tc)
12V
45mOhm @ 40A, 12V
6V @ 10mA
43 nC @ 12 V
±25V
1500 pF @ 100 V
-
429W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
326
In Stock
1 : $44.25000
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MOSFET (Metal Oxide)
650 V
210A (Tc)
15V, 20V
6.1mOhm @ 146.3A, 20V
5.6V @ 29.7mA
179 nC @ 18 V
+23V, -7V
6359 pF @ 400 V
-
625W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U02
TO-247-4
C3M0065100K
E3M0021120K
SIC, MOSFET, 21M, 1200V, TO-247-
Wolfspeed, Inc.
601
In Stock
1 : $44.46000
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SiCFET (Silicon Carbide)
1200 V
104A (Tc)
15V
28.8mOhm @ 62.1A, 15V
3.6V @ 17.1mA
177 nC @ 15 V
+19V, -8V
5100 pF @ 1000 V
-
405W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0021120K
SICFET N-CH 1200V 100A TO247-4L
Wolfspeed, Inc.
2,725
In Stock
1 : $45.73000
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SiCFET (Silicon Carbide)
1200 V
100A (Tc)
15V
28.8mOhm @ 50A, 15V
3.6V @ 17.7mA
162 nC @ 15 V
+15V, -4V
4818 pF @ 1000 V
-
469W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4L
UJ4SC075011K4S
750V/11MOHM, SIC, STACKED CASCOD
onsemi
509
In Stock
1 : $47.90000
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SiCFET (Cascode SiCJFET)
750 V
104A (Tc)
12V
14.2mOhm @ 60A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3245 pF @ 400 V
-
357W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
GeneSiC Semiconductor
1,175
In Stock
1 : $51.93000
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SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.