N-Channel 750 V 23A (Tj) 113W (Tc) Through Hole PG-TO247-4
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AIMZA75R090M1HXKSA1

DigiKey Part Number
448-AIMZA75R090M1HXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
AIMZA75R090M1HXKSA1
Description
AUTOMOTIVE_SICMOS
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
N-Channel 750 V 23A (Tj) 113W (Tc) Through Hole PG-TO247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolSiC™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
750 V
Current - Continuous Drain (Id) @ 25°C
23A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
83mOhm @ 7.4A, 20V
Vgs(th) (Max) @ Id
5.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
542 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
113W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4
Package / Case
TO-247-4
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In-Stock: 199
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Quantity
All prices are in AUD
Tube
QuantityUnit PriceExt Price
1$11.39000$11.39
30$6.58933$197.68
120$5.53575$664.29
510$4.81990$2,458.15
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without GST:$11.39000
Unit Price with GST:$12.52900