eGaN® FET Reliability


This presentation will discuss the reliability of commercially available enhancement mode gallium nitride transistors from EPC. To explain the devices’ reliability, this presentation will review how they operate and highlight both their similarities and differences versus today’s power MOSFETs. Additionally, this presentation will describe the reliability tests that were performed and the results achieved for EPC’s first-generation eGaN FETs.

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Related Parts

ImageManufacturer Part NumberDescriptionPart StatusFET TypeAvailable Quantity
GANFET N-CH 100V 36A DIE OUTLINEEPC2001CGANFET N-CH 100V 36A DIE OUTLINEActiveN-Channel95351 - ImmediateView Details
PTM Published on: 2011-04-06
PTM Updated on: 2016-03-30