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EPC9052/53/54 Development Boards

EPC's EPC9052/53/54 development boards are set to operate in differential mode

Image of EPC's EPC9052/53/54 Development BoardsEPC's GaN-based differential mode development boards can operate up to 30 MHz. These boards provide an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly. These development boards are designed for class-E applications, such as wireless charging, but can be used for any application where a low-side switch is utilized. Examples include push-pull converters; current-mode class-D amplifiers; common source bidirectional switches; generic high-voltage narrow pulse width applications, such as LiDAR; and many more.

These development boards feature 200 V rated eGaN FETs. The amplifiers are set to operate in differential mode and can be reconfigured to operate in single-ended mode and include the gate driver and logic supply regulator. All three boards have common preference specifications. The operating load conditions, including configuration, determine the optimal design load voltage and resistance.

EPC9052/53/54 Development Boards

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
BOARD DEV EPC2012C EGAN FETEPC9052BOARD DEV EPC2012C EGAN FET13 - ImmediateView Details
BOARD DEV EPC2019 EGAN FETEPC9053BOARD DEV EPC2019 EGAN FET14 - ImmediateView Details
BOARD DEV EPC2010C EGAN FETEPC9054BOARD DEV EPC2010C EGAN FET13 - ImmediateView Details

Bumped Die

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
GANFET N-CH 200V 22A DIE OUTLINEEPC2010CGANFET N-CH 200V 22A DIE OUTLINE9723 - ImmediateView Details
GANFET N-CH 200V 5A DIE OUTLINEEPC2012CGANFET N-CH 200V 5A DIE OUTLINE27689 - ImmediateView Details
GANFET N-CH 200V 8.5A DIEEPC2019GANFET N-CH 200V 8.5A DIE46924 - ImmediateView Details
Published: 2016-01-21