Name: IPP60R190C6XKSA1
Brand: Infineon Technologies
SKU: IPP60R190C6XKSA1-ND
Price: 6.116 AUD
Availability: InStock

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IPP60R190C6XKSA1
DigiKey Part Number	IPP60R190C6XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP60R190C6XKSA1
Description	MOSFET N-CH 600V 20.2A TO220-3
Customer Reference
Detailed Description	N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3
Datasheet	Datasheet
EDA/CAD Models	IPP60R190C6XKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 630µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Series CoolMOS™	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 100 V
Part Status Not For New Designs	Power Dissipation (Max) 151W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package PG-TO220-3
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPP60R190
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V

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