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IMW65R050M2HXKSA1 | |
|---|---|
cms-digikey-product-number | 448-IMW65R050M2HXKSA1-ND |
cms-manufacturer | |
cms-manufacturer-product-number | IMW65R050M2HXKSA1 |
cms-description | SILICON CARBIDE MOSFET |
cms-standard-lead-time | 23 Weeks |
cms-customer-reference | |
cms-detailed-description | N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-3-40 |
cms-datasheet | cms-datasheet |
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cms-type | cms-description | cms-select-all |
|---|---|---|
cms-category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V | |
Rds On (Max) @ Id, Vgs | 46mOhm @ 18.2A, 20V | |
Vgs(th) (Max) @ Id | 5.6V @ 3.7mA | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 18 V | |
Vgs (Max) | +23V, -7V | |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 153W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-3-40 | |
Package / Case | ||
Base Product Number |
In-Stock: 33
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Tube
| cms-quantity | cms-unit-price | cms-ext-price |
|---|---|---|
| 1 | $12.42000 | $12.42 |
| 30 | $7.22133 | $216.64 |
| 120 | $6.37450 | $764.94 |
| 510 | $6.24318 | $3,184.02 |
| Unit Price without GST: | $12.42000 |
|---|---|
| Unit Price with GST: | $13.66200 |
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