N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-3-40
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IMW65R050M2HXKSA1

DigiKey Part Number
448-IMW65R050M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW65R050M2HXKSA1
Description
SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-3-40
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
5.6V @ 3.7mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 18 V
Series
Vgs (Max)
+23V, -7V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 400 V
Part Status
Active
Power Dissipation (Max)
153W (Tc)
FET Type
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-3-40
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Base Product Number
Rds On (Max) @ Id, Vgs
46mOhm @ 18.2A, 20V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 670
Check for Additional Incoming Stock
All prices are in AUD
Tube
QuantityUnit PriceExt Price
1$12.89000$12.89
30$7.50533$225.16
120$6.32208$758.65
510$5.45555$2,782.33
1,020$5.21884$5,323.22
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without GST:$12.89000
Unit Price with GST:$14.17900