Name: IMCQ120R034M2HXTMA1
Brand: Infineon Technologies
SKU: 448-IMCQ120R034M2HXTMA1TR-ND
Price: 18.711 AUD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMCQ120R034M2HXTMA1
DigiKey Part Number	448-IMCQ120R034M2HXTMA1TR-ND - Tape & Reel (TR) 448-IMCQ120R034M2HXTMA1CT-ND - Cut Tape (CT) 448-IMCQ120R034M2HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMCQ120R034M2HXTMA1
Description	SICFET N-CH 1200V 64A 22PWRBSOP
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 64A (Tc) 326W (Tc) Surface Mount PG-HDSOP-22-3
Datasheet	Datasheet
EDA/CAD Models	IMCQ120R034M2HXTMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™ G2
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	34mOhm @ 20.4A, 18V
Vgs(th) (Max) @ Id	5.1V @ 6.4mA
Gate Charge (Qg) (Max) @ Vgs	48.7 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	1920 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	326W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HDSOP-22-3
Package / Case	22-PowerBSOP Module