EPC9057: 6A, 0 ~ 80V, Half-bridge

Summary

The EPC9057 development board is a 80 V maximum device voltage, 6 A maximum output current, half bridge with onboard gate drives, featuring the EPC2039 (EPC2214 is the recommended replacement, 10A) enhancement mode (eGaN®) FET.

The purpose of this development board is to simplify the evaluation processof the EPC2039 eGaN FET by including all the critical components ona single board that can be easily connected into any existing converter.

The EPC9057 development board is 2” x 1.5” and contains not only two EPC2039 eGaN FET in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram ofthe circuit is given in Figure 1.

For more information on the EPC2039s eGaN FET (now EPC2214) please refer to the datasheet which should be read in conjunction with this quick start guide. GaN

Specifications

Manufacturer	EPC
Category	Power Management
Sub-Category	Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number	917-1120-ND
Eval Board Supplier	EPC
Eval Board	Board not Stocked
Configuration	1 Half H-Bridge
Voltage Out Range	0 ~ 80 V
Current Out	6 A
Interface	PWM, Dual
Features	Internal Bootstrap Circuit Under Voltage Protection (UVP)
Switching Frequency (Max)	Not given
Component Count + Extras	27 + 7
Design Author	EPC
Main I.C. Base Part	EPC2039 EPC2214
Date Created By Author	2015-09
Date Added To Library	2017-04