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Cascode or e-mode: selecting the right GaN FET

Nexperia gives an overview into the differences between power GaN FET configurations, cascode and enhancement-mode (e-mode). Diving into the technical details such as the behaviors but also the electrical characteristics.

1/20/2025 10:23:21 PM

Part List

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
650 V, 80 MOHM GALLIUM NITRIDE (GAN080-650EBEZ650 V, 80 MOHM GALLIUM NITRIDE (2238 - Immediate$12.21View Details
650 V, 140 MOHM GALLIUM NITRIDEGAN140-650FBEZ650 V, 140 MOHM GALLIUM NITRIDE1977 - Immediate$11.78View Details
650 V, 140 MOHM GALLIUM NITRIDEGAN140-650EBEZ650 V, 140 MOHM GALLIUM NITRIDE2365 - Immediate$12.76View Details
650 V, 190 MOHM GALLIUM NITRIDEGAN190-650EBEZ650 V, 190 MOHM GALLIUM NITRIDE945 - Immediate$9.13View Details
650 V, 190 MOHM GALLIUM NITRIDEGAN190-650FBEZ650 V, 190 MOHM GALLIUM NITRIDE1393 - Immediate$8.43View Details

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e-mode GaN FETs Nexperia e-mode GaN FETs offer superior switching performance, improved efficiency to AC/DC and DC/AC power conversion, and significant space and BOM savings.