Name: SISS92DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS92DN-T1-GE3TR-ND
Price: 2.981 AUD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISS92DN-T1-GE3
DigiKey Part Number	SISS92DN-T1-GE3TR-ND - Tape & Reel (TR) SISS92DN-T1-GE3CT-ND - Cut Tape (CT) SISS92DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS92DN-T1-GE3
Description	MOSFET N-CH 250V 3.4A/12.3A PPAK
Manufacturer Standard Lead Time	42 Weeks
Customer Reference
Detailed Description	N-Channel 250 V 3.4A (Ta), 12.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 125 V
Part Status Active	Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 250 V	Supplier Device Package PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 12.3A (Tc)	Package / Case PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V	Base Product Number SISS92
Rds On (Max) @ Id, Vgs 173mOhm @ 3.6A, 10V