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N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP12N65E-GE3

DigiKey Part Number
SIHP12N65E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP12N65E-GE3
Description
MOSFET N-CH 650V 12A TO220AB
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP12N65E-GE3 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1224 pF @ 100 V
FET Type
Power Dissipation (Max)
156W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (11)
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AOT11S65LAlpha & Omega Semiconductor Inc.0785-1510-5-ND$0.00000Similar
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IPP65R420CFDXKSA1Rochester Electronics, LLC30,3332156-IPP65R420CFDXKSA1-ND$2.36601Similar
IXFP22N60P3IXYS219IXFP22N60P3-ND$11.02000Similar
In-Stock: 0
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All prices are in AUD
Tube
QuantityUnit PriceExt Price
1$4.82000$4.82
10$3.13200$31.32
100$2.16840$216.84
500$1.75648$878.24
1,000$1.62415$1,624.15
2,000$1.51291$3,025.82
5,000$1.39261$6,963.05
10,000$1.39230$13,923.00
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without GST:$4.82000
Unit Price with GST:$5.30200