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SIHB33N60E-GE3 is out of stock and can be placed on backorder.
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SIHB33N60E-GE3 | |
|---|---|
DigiKey Part Number | SIHB33N60E-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHB33N60E-GE3 |
Description | MOSFET N-CH 600V 33A D2PAK |
Manufacturer Standard Lead Time | 22 Weeks |
Customer Reference | |
Detailed Description | N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
Product Attributes
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Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V |
Packaging Tube | Vgs (Max) ±30V |
Part Status Active | Input Capacitance (Ciss) (Max) @ Vds 3508 pF @ 100 V |
FET Type | Power Dissipation (Max) 278W (Tc) |
Technology | Operating Temperature -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) 600 V | Mounting Type Surface Mount |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package TO-263 (D2PAK) |
Drive Voltage (Max Rds On, Min Rds On) 10V | Package / Case |
Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V | Base Product Number |
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Substitutes (11)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IPB60R099C6ATMA1 | Infineon Technologies | 3,220 | IPB60R099C6ATMA1CT-ND | $9.96000 | Similar |
| IPB60R099CPAATMA1 | Infineon Technologies | 129 | 448-IPB60R099CPAATMA1CT-ND | $12.35000 | Similar |
| IPB60R099CPATMA1 | Infineon Technologies | 2,519 | IPB60R099CPATMA1CT-ND | $11.46000 | Similar |
| IPB60R125C6ATMA1 | Infineon Technologies | 2,682 | IPB60R125C6ATMA1CT-ND | $8.34000 | Similar |
| IPB60R125CPATMA1 | Infineon Technologies | 1,158 | IPB60R125CPATMA1CT-ND | $8.65000 | Similar |
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In-Stock: 0
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Quantity
All prices are in AUD
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | $10.63000 | $10.63 |
| 10 | $7.16600 | $71.66 |
| 100 | $5.20580 | $520.58 |
| 500 | $4.37032 | $2,185.16 |
| 1,000 | $4.10221 | $4,102.21 |
| 2,000 | $4.04040 | $8,080.80 |
| Unit Price without GST: | $10.63000 |
|---|---|
| Unit Price with GST: | $11.69300 |
