Name: XK1R9F10QB,LXGQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-XK1R9F10QBLXGQTR-ND
Price: 8.063 AUD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

XK1R9F10QB,LXGQ
DigiKey Part Number	264-XK1R9F10QBLXGQTR-ND - Tape & Reel (TR) 264-XK1R9F10QBLXGQCT-ND - Cut Tape (CT) 264-XK1R9F10QBLXGQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	XK1R9F10QB,LXGQ
Description	MOSFET N-CH 100V 160A TO220SM
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)
Datasheet	Datasheet
EDA/CAD Models	XK1R9F10QB,LXGQ Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	160A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.92mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	184 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11500 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	175°C
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	TO-220SM(W)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	XK1R9F10