Name: TK3A60DA(Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK3A60DA(QM)-ND
Price: 2.937 AUD
Availability: OutOfStock

TK3A60DA(Q,M) is out of stock and can be placed on backorder.

Available Substitutes:

Direct

Toshiba Semiconductor and Storage

In Stock: 42

Unit Price: $2.69000

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STMicroelectronics

In Stock: 597

Unit Price: $4.03000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK3A60DA(Q,M)
DigiKey Part Number	TK3A60DA(QM)-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK3A60DA(Q,M)
Description	MOSFET N-CH 600V 2.5A TO220SIS
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 2.5A (Ta) 30W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.8Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK3A60