R6076MNZ1C9 is Obsolete and no longer manufactured.
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N-Channel 600 V 76A (Tc) 740W (Tc) Through Hole TO-247
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

R6076MNZ1C9

DigiKey Part Number
R6076MNZ1C9-ND
Manufacturer
Manufacturer Product Number
R6076MNZ1C9
Description
MOSFET N-CHANNEL 600V 76A TO247
Customer Reference
Detailed Description
N-Channel 600 V 76A (Tc) 740W (Tc) Through Hole TO-247
Datasheet
 Datasheet
EDA/CAD Models
R6076MNZ1C9 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
5V @ 1mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
7000 pF @ 25 V
FET Type
Power Dissipation (Max)
740W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-247
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
55mOhm @ 38A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (8)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
R6070JNZ4C13Rohm Semiconductor484846-R6070JNZ4C13-ND$27.69000Similar
RBR3LAM30ATRRohm Semiconductor1,044RBR3LAM30ACT-ND$0.98000Similar
IXFH60N65X2IXYS5,069238-IXFH60N65X2-ND$22.44000Similar
IXFX80N60P3IXYS188IXFX80N60P3-ND$35.26000Similar
SIHG47N60E-GE3Vishay Siliconix0SIHG47N60E-GE3-ND$16.28000Similar
Obsolete
This product is no longer manufactured. View Substitutes