Name: IQDH29NE2LM5CGSCATMA1
Brand: Infineon Technologies
SKU: 448-IQDH29NE2LM5CGSCATMA1TR-ND
Price: 6.083 AUD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IQDH29NE2LM5CGSCATMA1
DigiKey Part Number	448-IQDH29NE2LM5CGSCATMA1TR-ND - Tape & Reel (TR) 448-IQDH29NE2LM5CGSCATMA1CT-ND - Cut Tape (CT) 448-IQDH29NE2LM5CGSCATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IQDH29NE2LM5CGSCATMA1
Description	OPTIMOS POWER MOSFETS 25 V - 150
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 25 V 75A (Ta), 789A (Tc) 2.5W (Ta), 278W (Tc) Surface Mount PG-WHTFN-9-U02
Datasheet	Datasheet
EDA/CAD Models	IQDH29NE2LM5CGSCATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 5
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	75A (Ta), 789A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 1.448mA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 4.5 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	17000 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-WHTFN-9-U02
Package / Case	9-PowerWDFN