IPU80R2K8CEBKMA1 Infineon Technologies | Single FETs, MOSFETs

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IPU80R2K8CEBKMA1
DigiKey Part Number	IPU80R2K8CEBKMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPU80R2K8CEBKMA1
Description	MOSFET N-CH 800V 1.9A TO251-3
Customer Reference
Detailed Description	N-Channel 800 V 1.9A (Tc) 42W (Tc) Through Hole PG-TO251-3
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.9V @ 120µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Series CoolMOS™	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V
Part Status Discontinued at DigiKey	Power Dissipation (Max) 42W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 800 V	Supplier Device Package PG-TO251-3
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)	Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPU80R
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V

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IPU80R2K8CEBKMA1