Name: IPF009N04NF2SATMA1
Brand: Infineon Technologies
SKU: 448-IPF009N04NF2SATMA1TR-ND
Price: 6.743 AUD
Availability: InStock

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IPF009N04NF2SATMA1
cms-digikey-product-number	448-IPF009N04NF2SATMA1TR-ND - Tape & Reel (TR) 448-IPF009N04NF2SATMA1CT-ND - Cut Tape (CT) 448-IPF009N04NF2SATMA1DKR-ND - Digi-Reel®
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	IPF009N04NF2SATMA1
cms-description	TRENCH <= 40V
cms-standard-lead-time	24 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 40 V 49A (Ta), 302A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-TO263-7-U02
Datasheet	Datasheet
cms-eda-cad-models	IPF009N04NF2SATMA1 Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	StrongIRFET™2
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	49A (Ta), 302A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	0.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.4V @ 249µA
Gate Charge (Qg) (Max) @ Vgs	315 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-U02
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number	IPF009