TPN4R712 Toshiba Semiconductor and Storage

Discrete Semiconductor Products | Single FETs, MOSFETs

	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

	TPN4R712MD,L1Q MOSFET P-CH 20V 36A 8TSON Toshiba Semiconductor and Storage	2,978 In Stock	1 : $1.39000 Cut Tape (CT) 5,000 : $0.39775 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	36A (Tc)	2.5V, 4.5V	4.7mOhm @ 18A, 4.5V	1.2V @ 1mA	65 nC @ 5 V	±12V	4300 pF @ 10 V	-	42W (Tc)	150°C (TJ)	Surface Mount	8-TSON Advance (3.1x3.1)	8-PowerVDFN