G3R30 GeneSiC Semiconductor

Discrete Semiconductor Products | Single FETs, MOSFETs

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

G3R30MT12K SIC MOSFET N-CH 90A TO247-4 GeneSiC Semiconductor	1,263 In Stock	1 : $34.47000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	400W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R30MT12J SIC MOSFET N-CH 96A TO263-7 GeneSiC Semiconductor	0 In Stock Check Lead Time	1,000 : $26.70615 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	96A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	459W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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