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3 kW Power Supply Design for 48 V Server and Telecom Applications
Toshiba MOSFETs are designed to handle the challenges presented by modern server designs
Toshiba SiC MOSFETs and low-voltage MOSFETs are designed to handle the challenges presented by modern server designs, such as increased space density and high thermal environments.
In this application, Toshiba offers 650 V SiC MOSFETs for the primary side and 80 V MOSFETs for the secondary side. This is combined with SiC Schottky barrier diodes and digital isolation to achieve high efficiency in a semi-bridgeless PFC and phase-shift full-bridge synchronous rectifier topology.
Features
- 3 kW AC to DC converter
- High-efficiency MOSFETs and diodes
- Digital isolation
- Input voltage: AC 180 V to 264 V
- Output voltage: DC 50 V
- Output power: 3 kW
- Circuit topology: semi-bridgeless PFC, phase-shift full-bridge + synchronous rectification, ORing circuit for output
Applications
- Servers
- Telecom
- 48 V backplanes
Block Diagram
3 kW Power Supply Design
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | TW027U65C,RQ | N-CH SIC MOSFET, 650 V, 0.027 (T | 1934 - Immediate | $58.76 | View Details |
|  | TPM1R908QM,LQ | N-CH MOSFET, 80 V, 0.0019 @10V, | 8872 - Immediate | $4.24 | View Details |
|  | TW092V65C,LQ | N-CH SIC MOSFET, 650 V, 0.092 OH | 2480 - Immediate | $33.14 | View Details |
| | TRS12V65H,LQ | DIODE SIL CARB 650V 12A 4DFNEP | 3817 - Immediate | $6.45 | View Details |
|  | TPW2900ENH,L1Q | PB-F POWER MOSFET TRANSISTOR DSO | 1880 - Immediate | $5.42 | View Details |
|  | DCL540C01(T,E | DGTL ISOLTR 5KV 4CH GP 16-SOIC | 2893 - Immediate | $8.68 | View Details |
Published: 2026-02-10
Australia