LMG3410R070 Gallium Nitride (GaN) Power Stage

Texas Instruments' power stage features maximized reliability and optimized performance of any power supply

Image of Texas Instruments' LMG3410R070 GaN Power StageTexas Instruments' LMG3410R070 GaN power stage with integrated driver and protection enables the user to achieve new levels of power density and efficiency in power electronics systems. The LMG3410R070 features inherent advantages over silicon metal oxide semiconductor field-effect transistors (MOSFETs) including ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce electromagnetic interference (EMI). These advantages enable dense and efficient topologies including the totem-pole power factor correction (PFC).

The LMG3410R070 provides a smart alternative to traditional cascode GaNs and standalone GaN field-effect transistors (FETs) by integrating a unique set of features to simplify design, maximize reliability, and optimize the performance of any power supply. An integrated gate drive enables 100 V/ns switching with near zero VDS ringing, < 100 ns current limiting self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

  • Enables high-density power conversion designs:
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm x 8 mm QFN package for ease of design and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V unregulated supply needed
  • TI GaN process qualified through accelerated reliability in-application hard-switching mission profiles
  • Device options: latched overcurrent protection
  • Robust protection:
    • Requires no external protection components
    • Overcurrent protection with < 100 ns response
    • > 150 V/ns slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Undervoltage lockout (UVLO) protection on all supply rails
  • Integrated gate driver:
    • Zero common source inductance
    • 20 ns propagation delay for MHz operation
    • Process-tuned gate bias voltage for reliability
    • 25 V/ns to 100 V/ns user adjustable slew rate
  • High-density industrial and consumer power supplies
  • Multi-level converters
  • Solar inverters
  • Industrial motor drives
  • Uninterruptable power supplies
  • High-voltage battery chargers

LMG3410R070 GaN Power Stages

ImageManufacturer Part NumberDescriptionOutput ConfigurationApplicationsInterfaceAvailable QuantityView Details
PWR MGMT MOSFET/PWR DRIVERLMG3410R070RWHTPWR MGMT MOSFET/PWR DRIVERHalf BridgeSynchronous Buck ConvertersLogic115 - Immediate
195 - Factory Stock
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Published: 2018-12-06