SMC Diode Solutions

S2M0080120N 1200 V Silicon Carbide MOSFET

SMC Diode Solutions’ MOSFET is ideal for applications in challenging environments such as solar inverters and energy storage systems

Image of SMC Diode Solutions S2M0080120N Silicon Carbide MOSFETSMC Diode Solutions' S2M0080120N is a single SiC power MOSFET packaged in a SOT-227 case. The device is a high-voltage, N-channel, enhancement-mode MOSFET that has very low total conduction losses and very stable switching characteristics over extreme temperatures. The S2M0080120N is ideal for energy-sensitive, high-frequency applications in challenging environments.

Features
  • Positive temperature characteristics make it easy to parallel
  • Low on-resistance: 77 mΩ typical RDS(ON)
  • Fast switching speed
  • Low switching losses
  • Fast and robust intrinsic body diode
  • Process of non-bright tin electroplating
Applications
  • EV fast charging modules
  • EV on board chargers
  • Solar inverters
  • Online/industrial UPS
  • SMPS
  • DC/DC converters
  • Energy storage systems

S2M0080120N Silicon Carbide MOSFET

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
MOSFET SILICON CARBIDE SIC 1200VS2M0080120NMOSFET SILICON CARBIDE SIC 1200V27 - Immediate$32.28View Details
Published: 2024-06-03