Micro Commercial Components (MCC)

SICU02120G4J-TP 1200 V 2 A Silicon Carbide (SiC) Schottky Barrier Rectifier

The MCC SICU02120G4J-TP 1200 V 2 A SiC Schottky diode is ideal for high-efficiency, high-speed, and high-temperature power conversions

Image of MCC SICU02120G4J-TP Silicon Carbide Schottky Barrier RectifierThe Micro Commercial Components SICU02120G4J-TP high-voltage 2 A SiC Schottky Barrier rectifier comes in the industry-standard DPAK package. Leveraging the superior material properties of SiC, this diode eliminates reverse recovery charge (Qrr), a major source of switching loss in conventional silicon diodes. It is engineered for high-efficiency performance in high-voltage, high-frequency power conversion systems, offering superior reliability, higher temperature operation, and reduced EMI.

Features
  • Zero reverse recovery current eliminates reverse recovery losses, enabling higher efficiency
  • Positive temperature coefficient designed with forward voltage (Vf) increases with temperature, promoting natural thermal stability and easier parallel operation for higher current capabilities
  • Offers ultra-fast switching capabilities, making it ideal for high-frequency circuits
  • Capable of operating at higher junction temperatures (Tj max = +175°C) increases system ruggedness and reducing cooling requirements
  • The DPAK package offers a common footprint for easy design-in and provides good power handling capability with its exposed thermal pad
  • RoHS and halogen-free aligning with global environmental standards and green manufacturing initiatives
Applications
  • Power factor correction (PFC)
  • SMPS
  • Solar inverters
  • Induction heating and UPS system

SICU02120G4J-TP 1200 V 2 A Silicon Carbide (SiC) Schottky Barrier Rectifier

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
SIC SCHOTTKY BARRIER RECTIFIER,DSICU02120G4J-TPSIC SCHOTTKY BARRIER RECTIFIER,D2500 - Immediate$1.68View Details
Published: 2025-11-18