Superior GaN performance

For maximum efficiency: Infineon's CoolGaN™ HEMTs & EiceDRIVER™ gate drivers

CoolGaN™, Infineon's GaN technology, is unrivaled in quality, and backed by Infineon's in-house manufacturing for supply stability. CoolGaN™ products offer the highest efficiency and power density in the market, making them ideal for applications that demand superior performance. With extensive experience and application know-how, Infineon provides innovative product solutions across the entire spectrum, from discrete to highly integrated system solutions.

Full technology offering:

Si + SiC + GaN

Supply stability:

In-house manufacturing

IP Leadership:

650+ GaN specific patents

Highest quality standards:

Most reliable GaN HEMT in the industry

Application coverage:

Industrial, Consumer and Automotive

System expertise:

Switch + driver + control IC

Target applications:

Charger/Adapter
Lighting
Server
Telecom
TV/Monitor
Solar
Motor drives

Choose what is right for you – discrete or IPS.

Check the graph to find out if you need a flexible discrete solution or a highly integrated system for your next design. The CoolGaN™ offering provides the right product for your requirements.

Discrete solution: CoolGaN™ 600V GIT e-mode HEMTs + EiceDRIVER™ gate driver ICs

Infineon’s CoolGaN™ GIT HEMT is a highly efficient gallium nitride transistor technology for power conversion in the voltage range up to 600V. Infineon brought the e-mode concept to maturity with end-to-end production in high volumes. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market.

Key features

High performance
Top- and bottom-side cooled SMD packages
Highest efficiency and power density
Best thermal behavior in applications

Key benefits

Unique normally-off concept solution
Excellent for hard and soft-switching
Turn-on and turn-off optimized
Zero reverse recovery Qrr
RDS(on) shift immunity
Excellent Vth stability
Best Figure-of-Merits
Longer lifetime proven

MV CoolGaN Discretes

MV CoolGaN BDS

MV CoolGaN Boards

HV CoolGaN Discretes

HV IGaN

HV GaN BDS

HV GaN EVAL Boards

Gate driver ICs for 650 V GaN HEMTs

Recommended EiceDRIVER™ gate driver ICs for GaN HEMTs up to 200 V

Additional resources

Application notes

Whitepapers

MV CoolGan Discretes

Manufacturer Part Number	Description	FET Type	Technology	Drain to Source Voltage (Vdss)	Available Quantity	View Details
IGC033S10S1XTMA1	GANFET N-CH 100V 21A 6TDFN	N-Channel	GaNFET (Gallium Nitride)	100 V	6668 - Immediate	View Details
IGC037S12S1XTMA1	GANFET N-CH 120V 19A 6TDFN	N-Channel	GaNFET (Gallium Nitride)	120 V	1887 - Immediate	View Details
IGB110S101XTMA1	GANFET N-CH 100V 9A 4TDFN	N-Channel	GaNFET (Gallium Nitride)	100 V	2676 - Immediate	View Details
IGB070S10S1XTMA1	GANFET N-CH 100V 13A 4TDFN	N-Channel	GaNFET (Gallium Nitride)	100 V	2801 - Immediate	View Details
IGC025S08S1XTMA1	GANFET N-CH 80V 23A 6TDFN	N-Channel	GaNFET (Gallium Nitride)	80 V	1987 - Immediate	View Details
IGC033S101XTMA1	GANFET N-CH 100V 21A 6TDFN	N-Channel	GaNFET (Gallium Nitride)	100 V	3061 - Immediate	View Details
IGC019S06S1XTMA1	GANFET N-CH 60V 27A 6TDFN	N-Channel	GaNFET (Gallium Nitride)	60 V	2348 - Immediate	View Details
IGB110S10S1XTMA1	GANFET N-CH 100V 9A 4TDFN	N-Channel	GaNFET (Gallium Nitride)	100 V	4496 - Immediate	View Details