DMHC3025LSD and DMHC4035LSD MOSFET H-Bridges

Diodes Incorporated's extended family of dedicated MOSFET H-bridges reduce footprint by 50%

Image of Diodes DMHC3025LSD and DMHC4035LSD MOSFET H-BridgesDiodes Incorporated has extended its family of dedicated MOSFET H-bridges with the DMHC3025LSD and DMHC4035LSD. These components are designed for space limited single-phase brush and brushless motor driving and inductive wireless charging circuits.

These 30 V and 40 V rated MOSFETs have low RDS(ON) performance allowing them to operate under a high 70°C ambient temperature, while still supporting continuous currents of 3 A and 2 A respectively, thereby accommodating worst-case motor stall currents.

Features
    • Reduce footprint
      • Using single SO8 package, with 5 mm x 6 mm footprint, these H-bridges can save PCB space, reduce component count, and assembly costs
    • Low RDS(ON)
      • < 50 m and minimizes conduction losses, enabling the H-bridges to tolerate high-continuous-current under motor stall conditions
    • High pulsed current
      • 30 A peak pulse capability allows for a high in-rush current to be drawn safely during the start-up of the inductive load
    • Max Drain Voltage
      • 40 V and 30 V VDSS provide sufficient headroom for the intended 24 V and 12 V VCC rail voltages.
Applications
  • DC motor control
  • DC-AC inverters

DMHC3025LSD and DMHC4035LSD MOSFET H-Bridges

ImageManufacturer Part NumberDescriptionAvailable QuantityPrice
MOSFET 2N/2P-CH 30V 6A/4.2A 8SODMHC3025LSD-13MOSFET 2N/2P-CH 30V 6A/4.2A 8SO23096 - Immediate$2.05View Details
MOSFET 2N/2P-CH 40V 4.5A 8SODMHC4035LSD-13MOSFET 2N/2P-CH 40V 4.5A 8SO1230 - Immediate$2.24View Details
Published: 2015-02-24