Memory Problems? What Memory Problems?

High Performance Memories for Embedded Systems

Cypress Semiconductor Logo

Cypress is celebrating 35 of leadership in the discrete memory semiconductor industry. Since Cypress first introduced their Random Access Memory in 1982, they have built on that pedigree by enabling customers worldwide with the best memory technologies. Today Cypress offers our customers the highest performance and reliability NOR Flash, NAND Flash, SRAM, nvSRAM and F-RAM with discrete memory densities ranging from 4 K-bit to 1 G-bit. With unmatched quality and supply commitment, as well as a strong plan for future investment in new memory products, Cypress will continue to be an industry leader in discrete memory semiconductors for decades to come.

  NOR Flash HyperBus Memories NAND Flash
Serial NOR Flash Parallel NOR Flash
Features High performance and low pin-count Quad SPI

Highest performance

Fast random- access and high bandwidth

Highest performance and low-pin-count

HyperBus based Flash and DRAM

Reliable, High density and Secure
Density 16 Mbit to 1 Gbit 8 Mbit to 2 Gbit 64 Mbit to 512 Mbit 1 Gb to 16 Gb
Voltage 1.8 V and 3.0 V 1.8 V and 3.0 V 1.8 V and 3.0 V 1.8 V and 3.0 V
Features Energy-efficient, Reliable, high speed and endurance Fast, access time < 20 ns and unlimited read/write endurance Fast access times (10 ns), Low standby currents, High reliability RTR up to 2132 MT/s, FIT rates (less than 0.01-FIT/Mb) and ECC
Density 4 Kb to 4 Mb 64 Kb to 16 Mb 256 Kb to 64 Mb 2 Mb to 144 Mb
Voltage 3.0 V and 5.0 V 3.0 V (3.0 V/1.8 V I/O) and 5.0 V 1.8 V, 3.0 V and 5.0 V 1.3 V, 1.8 V, 3.3 V and 5.0 V

NOR Flash

NOR Flash Image

Cypress offers a broad array of NOR Flash Memory solutions including HyperFlash™, Serial NOR, and Parallel NOR with 3.0 V and 1.8 V voltages, and spanning densities of 8 Mb to 2 Gb.

  • HyperFlash provides bandwidth of up to 333 MB/s – more than five times faster than ordinary Quad SPI Flash – with one-third the number of pins of Parallel NOR Flash.
  • Serial NOR Flash provides a low-pin-count interface for densities up to 1 Gb with the FL-S (3.0 V) and FS-S (1.8 V) families.
  • Parallel NOR Flash offers a wide variety of reliable parallel interface products up to 2 Gb density.

All our products are complemented with world-class quality and support. Our NOR Flash portfolio includes many devices supporting Extended temperature range (-40°C to +125°C), AEC-Q100 automotive qualification, and PPAP support for Automotive customers. Cypress is committed to supporting long product lifecycles with our Longevity Program, which offers a compatible set of Core Features for 10 years for NOR Flash devices.

Family Key Features Density  
  • Read Bandwidth of up to 333 MB/s
  • Small 48-mm2 24-Ball Package
  • Low-pin-count 12-pin HyperBus™ Interface
128 Mb – 512 Mb HyperFlash Product Page
Serial NOR
  • Broad portfolio of 3.0 V and 1.8 V Quad SPI
    NOR Flash Memories
  • 133 MHz SDR/80 MHz DDR Operating Frequency
  • Read Bandwidth of up to 80 MB/s
16 Mb – 1 Gb Serial NOR Product Page
Parallel NOR
  • Initial Access Time of 55 – 110 ns
  • Page access times as fast as 15 ns
  • Up to 102 MB/s Read Bandwidth
8 Mb – 2 Gb Parallel NOR Product Page

NAND Flash

NAND Flash Image

Cypress NAND products add reliable, high density data storage to the Cypress flash product line. Cypress applies its stringent process for qualification, testing, extended temperature support and packaging to its line of SLC NAND products.

Cypress’s high performance and high reliability SLC NAND product portfolio includes two standard product families supporting 1-bit and 4-bit ECC options. They are available in 1 Gb to 16 Gb densities. Cypress offers SLC NAND products with operating temperatures up to +105°C, compact packages to fit in small form factors and meet stringent quality standards including AEC-Q100 for automotive applications.

All our NAND Flash Memory products are targeted specifically for data storage in Automotive Instrument Clusters and Infotainment Systems, Communication Equipment, Consumer Electronics and Industrial Automation.

SLC NAND Products Highlights

  • Densities: 1 Gb to 16 Gb
  • Voltages: 3 V and 1.8 V options
  • Endurance: 100,000 P/E cycles (typical)
  • Data Retention: 10 years (typical)
  • ECC Requirements: 1-bit or 4-bit options
  • Bus Width: x8 or x16 options
  • Temperature:
    • Industrial temp range (-40°C to 85°C)
    • Industrial plus temp range (-40°C to 105°C)
  • Packages:
    • 48-pin TSOP 12 mm x 20 mm
    • 63-ball BGA 9 mm x 11 mm
    • 67-ball BGA 8 mm x 6.5 mm
  • Open NAND Flash Interface (ONFI) 1.0 compliant
  • AEC-Q100 qualification
  • Complementary drivers and Cypress Flash File System (FFS) and latest datasheet for each product can be found under the product tab.
Family Voltage Interface Density  
MS-1 SLC NAND 1.8 V VCC X8 or X16 I/O 1 Gb – 4 Gb MS-1 SLC NAND Product Page
MS-2 SLC NAND 1.8 V VCC X8 or X16 I/O 1 Gb – 16 Gb MS-2 SLC NAND Product Page
ML-1 SLC NAND 3.3 V VCC X8 I/O 1 Gb – 8 Gb ML-1 SLC NAND Product Page
ML-2 SLC NAND 3.3 V VCC X8 I/O 1 Gb – 16 Gb ML-2 SLC NAND Product Page


CY56701 Image

Cypress is the worldwide market leader in synchronous SRAM. Cypress offers a wide portfolio including standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. As a top-tier manufacturer, Cypress complements its products with best-in-class manufacturing and customer support.

High-performance systems, such as enterprise routers and switches, demand high random access memory performance. Cypress's QDR® SRAM is optimized for high random access performance to enable next generation networks and other high-performance systems.

The QDR Consortium defines Quad Data Rate SRAM specifications. Participating companies develop pin- and function- compatible products ensuring multiple sources for customers. As a founding member, Cypress leads the definition of new standards in the QDR Consortium.

Random Transaction Rate (RTR)

Random Transaction Rate (RTR) is the number of fully random read or write transactions a memory can perform every second. It is measured in MT/s, or mega transactions per second. RTR is a critical metric in high performance applications, such as networking, where memory access is unpredictable.

Click here for Cypress’s Synchronous SRAM roadmap.
Family Speed (max) RTR (max) Density Range  
QDR-IV 1066 MHz 2132 MT/s 72-144 Mb QDR-IV Product Page
QDR-II+/DDR-II+ Xtreme 633 MHz 900 MT/s 36-72 Mb QDR-II+/DDR-II+ Xtreme Product Page
QDR-II+/DDR-II+ 550 MHz 666 MT/s 18-144 Mb QDR-II+/DDR-II+ Product Page
QDR-II/DDR-II 333 MHz 666 MT/s 18-144 Mb QDR-II/DDR-II Product Page
NoBL (No Bus Latency) 250 MHz 250 MT/s 4-72 Mb NoBL Product Page
Standard Sync 250 MHz N/A 2-72 Mb Standard Sync Product Page

Async SRAM


Cypress is a market leader in the Asynchronous SRAM space, and offers the broadest portfolio of fast asynchronous and low-power asynchronous SRAM (MoBL®) devices. Asynchronous SRAMs are used in a wide variety of industrial, medical, commercial, automotive and military applications that require the highest standards of reliability and performance. Best-in class process technology and manufacturing, steadfast customer support and high quality design ensure that Cypress asynchronous SRAM devices meet and exceed expectations. Cypress continues to invest into SRAM technology to create new and innovative products even as a number of manufacturers have exited the space.

The latest generation offers Asynchronous SRAMs with ECC. The products available are:

Fast & Micropower (MoBL®) SRAMs with ECC

The Fast and Micropower (MoBL®) with ECC SRAMs are form-fit-function compatible with existing Asynchronous SRAM devices based on older technology nodes. This allows you to improve system reliability without investing in PCB re-design.

Fast SRAMs with PowerSnooze™

A new Fast SRAM that combines the 10 ns access times of Fast SRAMs with low standby power comparable to that of the MoBL® family. PowerSnooze is an additional power-saving deep-sleep mode that achieves 12 uA (typical) deep-sleep current for a 16 Mb SRAM. The 16 Mb Fast SRAM with PowerSnooze also offers on-chip ECC which improves product reliability.

Click here for more details on Asynchronous SRAMs with ECC.
Click here for Cypress’s Asynchronous SRAM roadmap.
Family ECC Available Access Time Density Range  
Fast SRAM Yes 10 ns, 12 ns, 15 ns 64 Kb – 32 Mb Fast SRAM Product Page
MoBL Yes 45 ns, 55 ns 64 Kb – 64 Mb MoBL Product Page

Nonvolatile RAM

Nonvolatile-RAM Image

Cypress Semiconductor is the worldwide leader in Nonvolatile RAM products. Cypress has the broadest Nonvolatile RAM portfolio on the market, 25 years of experience, and has shipped over 1 billion devices to date. Nonvolatile RAM is memory that provides fast read and write access to any address and retains data when power is disrupted.

Cypress has two types of Nonvolatile RAM: nvSRAM (nonvolatile SRAM) and F-RAM (ferroelectric RAM). These products have three distinct advantages over traditional nonvolatile memories: high speed, high endurance, and low energy.

Additionally, Cypress offers Processor Companions, which are Nonvolatile RAMs with integrated features such as Real-Time Clock and Early Power-Fail Warning.

Cypress Nonvolatile RAM provides key value in many applications such as metering, industrial automation, portable medical devices, and automotive electronics.

Click here for Cypress’s Nonvolatile RAM roadmap.
Family Interface Access Time or Interface Speed Density Range  
F-RAM SPI 40 MHz 4 Kb – 4 Mb F-RAM SPI Product Page
I²C 1, 3.4 MHz 4 Kb – 1 Mb F-RAM I²C Product Page
Parallel 55, 60, 70 ns 64 Kb – 4 Mb F-RAM Parallel Product Page
nvSRAM SPI/QSPI 40 MHz/108 MHz 64 Kb – 1 Mb nvSRAM SPI Product Page
I²C 3.4 MHz 64 Kb – 1 Mb nvSRAM I²C Product Page
Parallel 25, 30, 35, 45, 55 ns 64 Kb – 16 Mb nvSRAM Parallel Product Page

Specialty RAM

Cypress offers legacy FIFO products that provide the ideal solution to interconnect problems such as flow control, rate matching, and bus matching for various markets including video, data and telecommunications, and network switching/routing.

Cypress also offers legacy multi-port memory solutions, offering the highest performance interconnect solutions in the industry. Cypress offers a wide product portfolio of more than 300 types of Asynchronous and Synchronous Dual Port, Quad Port, and FullFlex Dual Port SRAMs.

Family Density Range  
FIFO 2 Kb – 72 Mb FIFO Product Page
Synchronous Dual-Port SRAM 64 Kb – 36 Mb Synchronous Dual-Port SRAM Product Page
Asynchronous Dual-Port SRAM 8 Kb – 1 Mb Asynchronous Dual-Port SRAM Product Page