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EPC9019: 20A, 0 ~ 80V, Half H-Bridge

Summary

These development boards are in a half-bridge topology with onboard gate drives, featuring theEPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs). The purpose of these development boards is to simplify the evaluation process of these eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The development board is 2” x 1.5” and contains two eGaN FETs in a half-bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

For more information on the EPC2015/23 and EPC2001/21 eGaN FETs, please refer to the datasheets which should be read in conjunction with this quick start guide.

Specifications

Manufacturer EPC
Category Power Management
Sub-Category Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number 917-1068-ND
Eval Board Supplier EPC
Eval Board -
Configuration 1 Half H-Bridge
Voltage Out Range 0 ~ 80 V
Current Out 20 A
Interface PWM, Dual
Features Internal Bootstrap Circuit
Shoot Through Protection
Under Voltage Protection (UVP)
Switching Frequency (Max) Not given
Component Count + Extras 28 + 7
Design Author EPC
Main I.C. Base Part EPC2001
EPC2021
Date Created By Author 2014-07
Date Added To Library 2017-06

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