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SQJ431AEP-T1_GE3 P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Price & Procurement
17,885 In Stock
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All prices are in AUD.
Price Break Unit Price Extended Price
1 2.35000 $2.35
10 2.10800 $21.08
25 2.00080 $50.02
100 1.64360 $164.36
500 1.35774 $678.87
1,000 1.07189 $1,071.89

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Unit Price
$2.35000

Excludes GST

$2.58500

Includes GST

Alternate Package
  • Tape & Reel (TR)  : SQJ431AEP-T1_GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 15,000 - Immediate
  • Unit Price: AU$1.00044
  • Digi-Reel®  : SQJ431AEP-T1_GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 17,885 - Immediate
  • Unit Price: Digi-Reel®

SQJ431AEP-T1_GE3

Datasheet
Digi-Key Part Number SQJ431AEP-T1_GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SQJ431AEP-T1_GE3
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Description MOSFET P-CH 200V 9.4A PPAK SO-8
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Detailed Description

P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

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Customer Reference
Documents & Media
Datasheets SQJ431AEP
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 305mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case 8-PowerTDFN
Base Part Number SQJ431
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQJ431AEP-T1_GE3CT