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SISS26DN-T1-GE3 N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
Price & Procurement
31,143 In Stock
Can ship immediately
 

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All prices are in AUD.
Price Break Unit Price Extended Price
1 2.36000 $2.36
10 2.11600 $21.16
25 2.00800 $50.20
100 1.64960 $164.96
500 1.36272 $681.36
1,000 1.07583 $1,075.83

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Unit Price
$2.36000

Excludes GST

$2.59600

Includes GST

Alternate Package
  • Tape & Reel (TR)  : SISS26DN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 30,000 - Immediate
  • Unit Price: AU$1.00411
  • Digi-Reel®  : SISS26DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 31,143 - Immediate
  • Unit Price: Digi-Reel®

SISS26DN-T1-GE3

Datasheet
Digi-Key Part Number SISS26DN-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SISS26DN-T1-GE3
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Description MOSFET N-CH 60V 60A PPAK1212-8S
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Detailed Description

N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

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Customer Reference
Documents & Media
Datasheets SISS26DN
HTML Datasheet SISS26DN
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 30V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Part Number SISS26
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SISS26DN-T1-GE3CT