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SISS10DN-T1-GE3 N-Channel 40V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Price & Procurement
13,196 In Stock
Can ship immediately
 

Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 1.41000 AU$1.41
10 1.25800 AU$12.58
25 1.19440 AU$29.86
100 0.89590 AU$89.59
500 0.75936 AU$379.68
1,000 0.61858 AU$618.58

Submit a request for quotation on quantities greater than those displayed.

Unit Price
AU$1.41000

Excludes GST

AU$1.55100

Includes GST

Alternate Package
  • Tape & Reel (TR)  : SISS10DN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 12,000 - Immediate
  • Unit Price: AU$0.61005
  • Digi-Reel®  : SISS10DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 13,196 - Immediate
  • Unit Price: Digi-Reel®

SISS10DN-T1-GE3

Datasheet
Digi-Key Part Number SISS10DN-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SISS10DN-T1-GE3
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Description MOSFET N-CH 40V 60A PPAK 1212-8S
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 40V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 20V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case
Base Part Number SISS10
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SISS10DN-T1-GE3CT