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All prices are in AUD.
Price Break Unit Price Extended Price
1 1.77000 $1.77
10 1.58300 $15.83
25 1.50240 $37.56
100 1.23400 $123.40
500 1.01942 $509.71
1,000 0.80480 $804.80

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Unit Price
$1.77000

Excludes GST

$1.94700

Includes GST

Alternate Package

SI4483ADY-T1-GE3

Datasheet
Digi-Key Part Number SI4483ADY-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI4483ADY-T1-GE3
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Description MOSFET P-CH 30V 19.2A 8SO
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Detailed Description

P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets SI4483ADY
PCN Assembly/Origin Wafer Site 12/Sep/2018
HTML Datasheet SI4483ADY
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 19.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V
FET Feature -
Power Dissipation (Max) 2.9W (Ta), 5.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4483
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4483ADY-T1-GE3CT