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SI4143DY-T1-GE3 P-Channel 30V 25.3A (Tc) 6W (Tc) Surface Mount 8-SO
Price & Procurement
26,927 In Stock
Can ship immediately
 

Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 1.08000 AU$1.08
10 0.93900 AU$9.39
25 0.89560 AU$22.39
100 0.64990 AU$64.99
500 0.54306 AU$271.53
1,000 0.46217 AU$462.17

Submit a request for quotation on quantities greater than those displayed.

Unit Price
AU$1.08000

Excludes GST

AU$1.18800

Includes GST

Alternate Package
  • Tape & Reel (TR)  : SI4143DY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 25,000 - Immediate
  • Unit Price: AU$0.41162

SI4143DY-T1-GE3

Datasheet
Digi-Key Part Number SI4143DY-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI4143DY-T1-GE3
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Description MOSFET P-CHANNEL 30V 25.3A 8SO
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

P-Channel 30V 25.3A (Tc) 6W (Tc) Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets SI4143DY
HTML Datasheet SI4143DY
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 25.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 167nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 6630pF @ 15V
FET Feature -
Power Dissipation (Max) 6W (Tc)
Operating Temperature -55°C ~ 150°C (TA)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4143
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4143DY-T1-GE3CT