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18,271 In Stock
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Price Break Unit Price Extended Price
1 0.71000 $0.71
10 0.60900 $6.09
25 0.56840 $14.21
100 0.45450 $45.45
500 0.35714 $178.57
1,000 0.27597 $275.97

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$0.71000

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$0.78100

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Alternate Package
  • Tape & Reel (TR)  : SI2399DS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 15,000 - Immediate
  • Unit Price: AU$0.25162
  • Digi-Reel®  : SI2399DS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 18,271 - Immediate
  • Unit Price: Digi-Reel®

SI2399DS-T1-GE3

Datasheet
Digi-Key Part Number SI2399DS-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI2399DS-T1-GE3
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Description MOSFET P-CH 20V 6A SOT23-3
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Detailed Description

P-Channel 20V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SI2399DS-T1-GE3
PCN Assembly/Origin Mult Dev Mfg/Test Qual 11/Sep/2019
HTML Datasheet SI2399DS-T1-GE3
EDA / CAD Models SI2399DS-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 34mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 835pF @ 10V
FET Feature -
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2399
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2399DS-T1-GE3CT