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SI2318CDS-T1-GE3 N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
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33,451 In Stock
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Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 0.64000 AU$0.64
10 0.51400 AU$5.14
25 0.46960 AU$11.74
100 0.29480 AU$29.48
500 0.27300 AU$136.50
1,000 0.18564 AU$185.64

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Unit Price
AU$0.64000

Excludes GST

AU$0.70400

Includes GST

Alternate Package
  • Tape & Reel (TR)  : SI2318CDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 30,000 - Immediate
  • Unit Price: AU$0.17800
  • Digi-Reel®  : SI2318CDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 33,451 - Immediate
  • Unit Price: Digi-Reel®

SI2318CDS-T1-GE3

Datasheet
Digi-Key Part Number SI2318CDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2318CDS-T1-GE3
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Description MOSFET N-CH 40V 5.6A SOT-23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets Si2318CDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si2318CDS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 20V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2318
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2318CDS-T1-GE3CT