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SI2304BDS-T1-GE3 N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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43,944 In Stock
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Quantity
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Price Break Unit Price Extended Price
1 0.50000 AU$0.50
10 0.40900 AU$4.09
25 0.37440 AU$9.36
100 0.23510 AU$23.51
500 0.21766 AU$108.83
1,000 0.14799 AU$147.99

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Unit Price
AU$0.50000

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AU$0.55000

Includes GST

Alternate Package
  • Tape & Reel (TR)  : SI2304BDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 42,000 - Immediate
  • Unit Price: AU$0.14190
  • Digi-Reel®  : SI2304BDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 43,944 - Immediate
  • Unit Price: Digi-Reel®

SI2304BDS-T1-GE3

Datasheet
Digi-Key Part Number SI2304BDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2304BDS-T1-GE3
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Description MOSFET N-CH 30V 2.6A SOT23-3
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets Si2304BDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si2304BDS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 15V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2304
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2304BDS-T1-GE3CT