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SI1416EDH-T1-GE3 N-Channel 30V 3.9A (Tc) 2.8W (Tc) Surface Mount SOT-363
Price & Procurement
38,224 In Stock
Can ship immediately
 

Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 0.64000 AU$0.64
10 0.51600 AU$5.16
25 0.47200 AU$11.80
100 0.29620 AU$29.62
500 0.27428 AU$137.14
1,000 0.18651 AU$186.51

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Unit Price
AU$0.64000

Excludes GST

AU$0.70400

Includes GST

Alternate Package
  • Tape & Reel (TR)  : SI1416EDH-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 36,000 - Immediate
  • Unit Price: AU$0.17883
  • Digi-Reel®  : SI1416EDH-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 38,224 - Immediate
  • Unit Price: Digi-Reel®

SI1416EDH-T1-GE3

Datasheet
Digi-Key Part Number SI1416EDH-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1416EDH-T1-GE3
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Description MOSFET N-CH 30V 3.9A SOT-363
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 30V 3.9A (Tc) 2.8W (Tc) Surface Mount SOT-363

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Customer Reference
Documents & Media
Datasheets SI1416EDH
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI1416EDH
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 58mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363
Base Part Number SI1416
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1416EDH-T1-GE3CT