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5,609 In Stock
Can ship immediately
 

Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 10.79000 $10.79
10 9.25300 $92.53
25 8.61800 $215.45
100 7.71110 $771.11
500 6.80394 $3,401.97
1,000 6.12355 $6,123.55
2,500 5.97922 $14,948.05

Submit a request for quotation on quantities greater than those displayed.

Unit Price
$10.79000

Excludes GST

$11.86900

Includes GST

SCT3120ALGC11

Datasheet
Digi-Key Part Number SCT3120ALGC11-ND
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Manufacturer

Rohm Semiconductor

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Manufacturer Part Number SCT3120ALGC11
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Description SICFET N-CH 650V 21A TO247N
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Manufacturer Standard Lead Time 17 Weeks
Detailed Description

N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Rohm Semiconductor
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 18V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V
FET Feature -
Power Dissipation (Max) 103W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Part Number SCT3120
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 30