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SI4435DYTRPBF P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
Price & Procurement
14,363 In Stock
Can ship immediately
 

Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 1.33000 AU$1.33
10 1.14900 AU$11.49
25 1.09560 AU$27.39
100 0.79510 AU$79.51
500 0.66432 AU$332.16
1,000 0.56537 AU$565.37

Submit a request for quotation on quantities greater than those displayed.

Unit Price
AU$1.33000

Excludes GST

AU$1.46300

Includes GST

Alternate Package
  • Tape & Reel (TR)  : SI4435DYPBFTR-ND
  • Minimum Quantity: 4,000
  • Quantity Available: 12,000 - Immediate
  • Unit Price: AU$0.48523
  • Digi-Reel®  : SI4435DYPBFDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 14,363 - Immediate
  • Unit Price: Digi-Reel®

SI4435DYTRPBF

Datasheet
Digi-Key Part Number SI4435DYPBFCT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number SI4435DYTRPBF
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Description MOSFET P-CH 30V 8A 8SO
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names *SI4435DYTRPBF
SI4435DYPBFCT