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IRF100B201 N-Channel 100V 192A (Tc) 441W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 4.33000 AU$4.33
10 3.90200 AU$39.02
100 3.13570 AU$313.57
500 2.43892 AU$1,219.46
1,000 2.02082 AU$2,020.82

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IRF100B201-ND
Copy   IRF100B201-ND
Quantity Available 5,601
Can ship immediately
Manufacturer

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Manufacturer Part Number

IRF100B201

Copy   IRF100B201
Description MOSFET N-CH 100V 192A TO-220AB
Copy   MOSFET N-CH 100V 192A TO-220AB
Manufacturer Standard Lead Time 10 Weeks
Detailed Description

N-Channel 100V 192A (Tc) 441W (Tc) Through Hole TO-220AB

Copy   N-Channel 100V 192A (Tc) 441W (Tc) Through Hole TO-220AB
Documents & Media
Datasheets IRF100(B,S)201
Other Related Documents IR Part Numbering System
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Site REV 24/Apr/2019
Simulation Models IRF100B201 Saber Model
IRF100B201 Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®, StrongIRFET™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9500pF @ 50V
FET Feature -
Power Dissipation (Max) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 1,000
Other Names SP001561498

09:33:04 5/19/2019