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IPP045N10N3GXKSA1 N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3
Price & Procurement
 

Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 4.00000 AU$4.00
10 3.59400 AU$35.94
25 3.39040 AU$84.76
100 2.88890 AU$288.89
500 2.37346 AU$1,186.73
2,500 1.83095 AU$4,577.38
5,000 1.76314 AU$8,815.71

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPP045N10N3GXKSA1-ND
Copy   IPP045N10N3GXKSA1-ND
Quantity Available 4,301
Can ship immediately
Manufacturer

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Manufacturer Part Number

IPP045N10N3GXKSA1

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Description MOSFET N-CH 100V 100A TO220-3
Copy   MOSFET N-CH 100V 100A TO220-3
Manufacturer Standard Lead Time 52 Weeks
Detailed Description

N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3

Copy   N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3
Documents & Media
Datasheets IPP045N10N3 G
Other Related Documents Part Number Guide
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Simulation Models OptiMOS™ Power MOSFET 100V N-Channel Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 500
Other Names IPP045N10N3 G
IPP045N10N3 G-ND
IPP045N10N3G
SP000680794

02:53:13 7/23/2019