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IPB60R080P7ATMA1 N-Channel 650V 37A (Tc) 129W (Tc) Surface Mount D²PAK (TO-263AB)
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All prices are in AUD.
Price Break Unit Price Extended Price
1 6.71000 $6.71
10 6.02900 $60.29
25 5.69880 $142.47
100 4.93930 $493.93
500 4.20466 $2,102.33

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Unit Price
$6.71000

Excludes GST

$7.38100

Includes GST

Alternate Package

IPB60R080P7ATMA1

Datasheet
Digi-Key Part Number IPB60R080P7ATMA1CT-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPB60R080P7ATMA1
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Description MOSFET N-CH 650V 37A D2PAK
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Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 650V 37A (Tc) 129W (Tc) Surface Mount D²PAK (TO-263AB)

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Customer Reference
Documents & Media
Datasheets IPB60R080P7
PCN Assembly/Origin Mult Dev Wafer Site Add 10/Mar/2021
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
HTML Datasheet IPB60R080P7
EDA / CAD Models IPB60R080P7ATMA1 by Ultra Librarian
Simulation Models CoolMOS™ Power MOSFET 600V P7 Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™ P7
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 400V
FET Feature -
Power Dissipation (Max) 129W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number IPB60R080
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPB60R080P7ATMA1CT