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IPB025N08N3GATMA1 N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)
Price & Procurement
 

Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 7.73000 AU$7.73
10 6.94600 AU$69.46
100 5.69040 AU$569.04
500 4.84414 AU$2,422.07

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Product Overview
Digi-Key Part Number IPB025N08N3GATMA1CT-ND
Copy   IPB025N08N3GATMA1CT-ND
Quantity Available 1,452
Can ship immediately
Manufacturer

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Manufacturer Part Number

IPB025N08N3GATMA1

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Description MOSFET N-CH 80V 120A TO263-3
Copy   MOSFET N-CH 80V 120A TO263-3
Manufacturer Standard Lead Time 39 Weeks
Detailed Description

N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)

Copy   N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)
Documents & Media
Datasheets IPB025N08N3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Simulation Models MOSFET OptiMOS™ 80V N-Channel Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 40V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names IPB025N08N3 GCT
IPB025N08N3 GCT-ND
IPB025N08N3GATMA1CT
Alternate Package | This part is also available in the following packaging:

09:24:00 8/20/2019