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ZXMHC6A07N8TC Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SO
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All prices are in AUD.
Price Break Unit Price Extended Price
1 1.52000 $1.52
10 1.35700 $13.57
25 1.28760 $32.19
100 1.05770 $105.77
500 0.87378 $436.89
1,000 0.68983 $689.83

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Unit Price
$1.52000

Excludes GST

$1.67200

Includes GST

Alternate Package
  • Tape & Reel (TR)  : ZXMHC6A07N8DITR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 0
  • Unit Price: $0.64384

ZXMHC6A07N8TC

Datasheet
Digi-Key Part Number ZXMHC6A07N8DICT-ND
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Manufacturer

Diodes Incorporated

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Manufacturer Part Number ZXMHC6A07N8TC
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Description MOSFET 2N/2P-CH 60V 8-SOIC
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Manufacturer Standard Lead Time 50 Weeks
Detailed Description

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets ZXMHC6A07N8
Environmental Information Diodes RoHS 3 Cert
PCN Assembly/Origin Mult Dev A/T Site 31/Mar/2021
HTML Datasheet ZXMHC6A07N8
Product Attributes
Type Description Select All
Categories
Manufacturer Diodes Incorporated
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 N and 2 P-Channel (H-Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.39A, 1.28A
Rds On (Max) @ Id, Vgs 250mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 166pF @ 40V
Power - Max 870mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Part Number ZXMHC6A07
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names ZXMHC6A07N8DICT