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SISS26 Vishay Siliconix - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
AUD
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SISS26LDN-T1-GE3 Datasheet SISS26LDN-T1-GE3 - Vishay Siliconix SISS26LDN-T1-GE3TR-ND SISS26LDN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 23.7A/81.2A PPAK 0 Available: 0
Standard Lead Time 47 Weeks
$0.86229 3,000 Minimum: 3,000 Tape & Reel (TR)
Alternate Packaging
TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60V 23.7A (Ta), 81.2A (Tc) 4.5V, 10V 4.3mOhm @ 15A, 10V 2.5V @ 250µA 48nC @ 10V ±20V 1980pF @ 30V
-
4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S
SISS26LDN-T1-GE3 Datasheet SISS26LDN-T1-GE3 - Vishay Siliconix SISS26LDN-T1-GE3CT-ND SISS26LDN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 23.7A/81.2A PPAK 6,051 - Immediate Available: 6,051 $1.90000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60V 23.7A (Ta), 81.2A (Tc) 4.5V, 10V 4.3mOhm @ 15A, 10V 2.5V @ 250µA 48nC @ 10V ±20V 1980pF @ 30V
-
4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S
SISS26LDN-T1-GE3 Datasheet SISS26LDN-T1-GE3 - Vishay Siliconix SISS26LDN-T1-GE3DKR-ND SISS26LDN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 23.7A/81.2A PPAK 6,051 - Immediate Available: 6,051 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60V 23.7A (Ta), 81.2A (Tc) 4.5V, 10V 4.3mOhm @ 15A, 10V 2.5V @ 250µA 48nC @ 10V ±20V 1980pF @ 30V
-
4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S
SISS26DN-T1-GE3 Datasheet SISS26DN-T1-GE3 - Vishay Siliconix SISS26DN-T1-GE3TR-ND SISS26DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 60A PPAK1212-8S 0 Available: 0
Standard Lead Time 47 Weeks
$1.11753 3,000 Minimum: 3,000 Tape & Reel (TR)
Alternate Packaging
TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60V 60A (Tc) 6V, 10V 4.5mOhm @ 15A, 10V 3.6V @ 250µA 37nC @ 10V ±20V 1710pF @ 30V
-
57W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S
SISS26DN-T1-GE3 Datasheet SISS26DN-T1-GE3 - Vishay Siliconix SISS26DN-T1-GE3CT-ND SISS26DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 60A PPAK1212-8S 186 - Immediate Available: 186 $2.45000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60V 60A (Tc) 6V, 10V 4.5mOhm @ 15A, 10V 3.6V @ 250µA 37nC @ 10V ±20V 1710pF @ 30V
-
57W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S
SISS26DN-T1-GE3 Datasheet SISS26DN-T1-GE3 - Vishay Siliconix SISS26DN-T1-GE3DKR-ND SISS26DN-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 60A PPAK1212-8S 186 - Immediate Available: 186 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60V 60A (Tc) 6V, 10V 4.5mOhm @ 15A, 10V 3.6V @ 250µA 37nC @ 10V ±20V 1710pF @ 30V
-
57W (Tc) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S
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16:31:57 7/29/2021