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In Stock: 1,664
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Quantity
All prices are in AUD.
Price Break Unit Price Extended Price
1 17.55000 $17.55
10 16.12500 $161.25
25 15.45720 $386.43
100 13.61920 $1,361.92
500 12.11528 $6,057.64
1,000 11.11263 $11,112.63

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Unit Price
$17.55000

Excludes GST

$19.30500

Includes GST

SCT2120AFC

Datasheet
Digi-Key Part Number SCT2120AFC-ND
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Manufacturer

Rohm Semiconductor

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Manufacturer Part Number SCT2120AFC
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Description SICFET N-CH 650V 29A TO220AB
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Detailed Description

N-Channel 650V 29A (Tc) 165W (Tc) Through Hole TO-220AB

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Customer Reference
Documents & Media
Datasheets SCT2120AF Datasheet
TO-220AB Taping Spec
Other Related Documents TO-220AB Inner Structure
SiC Flammability
MOS-2GTHD Reliability Test
Product Training Modules SiC Trench MOSFETs
Environmental Information SiC Level 1 MSL
SiC Whisker Info
SCT2120AF ESD Data
Featured Product SiC Power MOSFETs
PCN Obsolescence/ EOL Mult Dev EOL 1/Feb/2021
PCN Assembly/Origin SCT2120AFC Wafer Chgs 2/Jun/2020
HTML Datasheet SCT2120AF Datasheet
TO-220AB Taping Spec
Simulation Models SCT2120AF Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Rohm Semiconductor
Series -
Packaging Tube 
Part Status Obsolete
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 156mOhm @ 10A, 18V
Vgs(th) (Max) @ Id 4V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 61nC @ 18V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 500V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number SCT2120
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1,000
Other Names SCT2120AFCU